Epitaxial graphene perfection vs. SiC substrate quality
作者： Dominika Teklinska , Kinga Kosciewicz , Kacper Grodecki , Mateusz Tokarczyk , Grzegorz Kowalski
DOI: 10.2478/S11534-010-0136-3
关键词:
摘要: Polytype instability of SiC epitaxial films was the main focus attention in experiment performed since this factor has a decisive influence on graphene growth, which second stage experiment. Layers deposited various initial C/Si ratios were analyzed.
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