Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC
作者： S.A. Sakwe , R. Müller , P.J. Wellmann
DOI: 10.1016/J.JCRYSGRO.2005.11.096
关键词:
摘要: Abstract We have developed a KOH-based defect etching procedure for silicon carbide (SiC), which comprises in situ temperature measurement and control of melt composition. As benefit the first time reproducible conditions were established (calibration plot, rate versus time); is independent, i.e. no altering KOH composition takes place, absolute values can be set. The paper describes this advanced furnace, including development new sensor resistant to molten KOH. present updated, parameters n-type SiC low highly p-type doped SiC, are used quantitative analysis. best recipes we found T = 5 3 0 ° C / min (activation energy: 16.4 kcal/mol) 13.5 kcal/mol) respectively.
harvard.edu
elsevier.com
sci-hub.se 参考文章(9)
Yu.M. Tairov, V.F. Tsvetkov, Investigation of growth processes of ingots of silicon carbide single crystals Journal of Crystal Growth. ,vol. 43, pp. 209- 212 ,(1978) , 10.1016/0022-0248(78)90169-0
K. Bertilsson, H-E. Nilsson, Optimization of 2H, 4H and 6H-SiC high speed vertical MESFETs Diamond and Related Materials. ,vol. 11, pp. 1254- 1257 ,(2002) , 10.1016/S0925-9635(01)00550-7
R. Yakimova, A.-L. Hylén, M. Tuominen, M. Syväjärvi, E. Janzén, Preferential etching of SiC crystals Diamond and Related Materials. ,vol. 6, pp. 1456- 1458 ,(1997) , 10.1016/S0925-9635(97)00076-9
T.L. Straubinger, M. Bickermann, R. Weingärtner, P.J. Wellmann, A. Winnacker, Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method Journal of Crystal Growth. ,vol. 240, pp. 117- 123 ,(2002) , 10.1016/S0022-0248(02)00917-X
D. Siche, D. Klimm, T. Hölzel, A. Wohlfart, Reproducible defect etching of SiC single crystals Journal of Crystal Growth. ,vol. 270, pp. 1- 6 ,(2004) , 10.1016/J.JCRYSGRO.2004.05.098
Rositza Yakimova, Mikael Syväjärvi, Tihomir Iakimov, AO Okunev, VE Udal'tsov, Erik Janzén, None, Orientation-dependent defect formation in silicon carbide epitaxial layers Materials Science Forum. pp. 281- 284 ,(2003) , 10.4028/WWW.SCIENTIFIC.NET/MSF.433-436.281
Shizhong Wang, Jibao He, Defects analysis in single crystalline 6H-SiC at different PVT growth stages Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 83, pp. 8- 12 ,(2001) , 10.1016/S0921-5107(00)00550-X
Sakwe Aloysius Sakwe, Z.G. Herro, Peter J. Wellmann, Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability Materials Science Forum. pp. 283- 286 ,(2005) , 10.4028/WWW.SCIENTIFIC.NET/MSF.483-485.283
Jun Takahashi, Masatoshi Kanaya, Yuichiro Fujiwara, Sublimation growth of SiC single crystalline ingots on faces perpendicular to the (0001) basal plane Journal of Crystal Growth. ,vol. 135, pp. 61- 70 ,(1994) , 10.1016/0022-0248(94)90726-9