Reproducible defect etching of SiC single crystals

作者: D. Siche , D. Klimm , T. Hölzel , A. Wohlfart

DOI: 10.1016/J.JCRYSGRO.2004.05.098

关键词:

摘要: Abstract Etching in molten KOH is a usual method to reveal the defect density across SiC wafer. Time stabilised etching rates are desirable for an objective assessment of via etch pit counting. The expected rate stabilising effect oxygen, released from addition 2 wt% KNO 3 was not found. observed increase with time purely could be masked by adding 20 wt% K 2 CO , concentration roughly at eutectic point.

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