Method of forming a second antiferromagnetic exchange-coupling layer for magnetoresistive (MR) and giant MR (GMR) applications

作者: Tai Min , Mao-Min Chen , Rongfu Xiao , Po-Kang Wan , Chyu-Jiuh Torng

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摘要: A method of manufacturing a magnetoresistive head comprises forming structure with element first AFM element. Perform annealing step at high temperature magnetic field. Form the remaining MR including second elements. low field (Hann) following fabrication Then perform no externally applied (Hann =0) to increase Hex full strength, whereby stability is enhanced or increases its if there were decrease during step.

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