Synthesis and Control of Ultra Thin Gate Oxides for the 90 and 65 NM Nodes

摘要: Thin gate oxide processes for advanced semiconductor manufacturing present many challenges at both the 90 and 65 nm technology nodes. In most cases films are oxynitride materials (SiO/sub x/N/sub y/) constructed in single wafer tools clustered on same common platform. The combination of discrete process chambers atomic dimensions dielectric puts a premium film characterization control. electrical specifications severe with values /spl plusmn/1 Aring/ leading to nitrogen oxygen dose requirements better than plusmn/5E14 at/cm/sup 2/. recent past difficulties maintaining those have repeatedly lead tool down situations limited run paths. aftermath events, investigations which followed exposed weaknesses metrology qualification strategies used characterize processes. this paper, number examples will be presented illustrate sensitivity composite excursions any its component steps. relative sensitivities different in-line measurement techniques (optical, electrical, chemical) reported data clear advantages compositional analysis.