Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

摘要: Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with mean diameter 25 nm synthesized controlled thermolysis mixture complexes and complexes. After direct np GaN:Eu LED sintering at 850 °C for 10 min under atmospheric conditions, resistivity film was 5.2 mΩ cm. fabricated up to 3 mm square surface emitted red light when on-voltage exceeded.