Low temperature growth of europium doped Ga2O3 luminescent films
作者： Zhengwei Chen , Katsuhiko Saito , Tooru Tanaka , Mitsuhiro Nishio , Makoto Arita
DOI: 10.1016/J.JCRYSGRO.2015.08.020
关键词:
摘要: Abstract Europium (Eu) doped Ga 2 O 3 films were deposited on sapphire substrates by pulsed laser deposition (PLD) with varying Eu contents at substrate temperature as low 500 °C. Energy dispersive spectroscopy results show that different can be obtained changing the composition in targets. X-ray diffraction and Raman spectra analysis indicate all have monoclinic structure a preferable (−201) orientation. The exhibited high transmittance more than 90% visible region 80% UV region. Intense red emissions 613 nm due to transitions from 5 D 0 7 F levels clearly observed for films, suggesting PLD is promising method obtaining quality growth temperature.
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