AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers
作者： Y. Xiang , C. Reuterskiöld-Hedlund , X. Yu , C. Yang , T. Zabel
DOI: 10.1364/OE.23.015680
关键词:
摘要: We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based homogeneous integration an InGaAs/GaAs VCSEL AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting non-conducting mirrors are used to ensure a low-loss structure, variety design variations investigated for proper internal biasing current injection wide operating range. Optimized devices show mW-range output power, mA-range base threshold high-temperature operation at least 60°C with in its active mode currents well beyond threshold. Current confinement schemes pnp-blocking layers or buried tunnel junction as asymmetric reduced extrinsic resistances.
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Wei Shi, Behnam Faraji, Mark Greenberg, Jesper Berggren, Yu Xiang, Mattias Hammar, Michel Lestrade, Zhi-Qiang Li, Z. M. Simon Li, Lukas Chrostowski, Invited Paper : Design and modeling of a transistor vertical-cavity surface-emitting laser Optical and Quantum Electronics. ,vol. 42, pp. 659- 666 ,(2011) , 10.1007/S11082-011-9444-0
N. Suzuki, T. Anan, H. Hatakeyama, M. Tsuji, Low resistance tunnel junctions with type-II heterostructures Applied Physics Letters. ,vol. 88, pp. 231103- ,(2006) , 10.1063/1.2210082
Mong-Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak, Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage IEEE Photonics Technology Letters. ,vol. 26, pp. 1003- 1006 ,(2014) , 10.1109/LPT.2014.2312360
Hn W Then, CH Wu, G Walter, M Feng, N Holonyak, None, Electrical-optical signal mixing and multiplication (2-->22 GHz) with a tunnel junction transistor laser Applied Physics Letters. ,vol. 94, pp. 101114- ,(2009) , 10.1063/1.3100294
A. Larsson, Advances in VCSELs for Communication and Sensing IEEE Journal of Selected Topics in Quantum Electronics. ,vol. 17, pp. 1552- 1567 ,(2011) , 10.1109/JSTQE.2011.2119469
M. Feng, H. W. Then, N. Holonyak, G. Walter, A. James, Resonance-free frequency response of a semiconductor laser Applied Physics Letters. ,vol. 95, pp. 033509- ,(2009) , 10.1063/1.3184580
Yu Xiang, Carl Reuterskiold-Hedlund, Xingang Yu, Chen Yang, Thomas Zabel, Mattias Hammar, Muhammad Nadeem Akram, Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers IEEE Photonics Technology Letters. ,vol. 27, pp. 721- 724 ,(2015) , 10.1109/LPT.2015.2390298
Y. Xiang, X. Yu, J. Berggren, T. Zabel, M. Hammar, M. N. Akram, Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser Applied Physics Letters. ,vol. 102, pp. 191101- ,(2013) , 10.1063/1.4803175
L. Chrostowski, X. Zhao, C.J. Chang-Hasnain, R. Shau, M. Ortsiefer, M.-C. Amann, 50-GHz optically injection-locked 1.55-/spl mu/m VCSELs IEEE Photonics Technology Letters. ,vol. 18, pp. 367- 369 ,(2006) , 10.1109/LPT.2005.862370
B. Faraji, W. Shi, D. L. Pulfrey, L. Chrostowski, Common-emitter and common-base small-signal operation of the transistor laser Applied Physics Letters. ,vol. 93, pp. 143503- ,(2008) , 10.1063/1.2998267