Performance Optimization of GaAs-Based Vertical-Cavity Surface-Emitting Transistor-Lasers
作者： Yu Xiang , Carl Reuterskiold-Hedlund , Xingang Yu , Chen Yang , Thomas Zabel
关键词:
摘要: We report on the optimization of p-n-p-type vertical-cavity surface-emitting transistor-lasers based fusion between an AlGaAs/GaAs heterojunction bipolar transistor and InGaAs/GaAs laser (VCSEL) using epitaxial regrowth process. It is shown how a proper design base region can extend active range operation well beyond lasing threshold, thereby resulting in typical operational characteristics including milliwatt-range output power, milliampere-range threshold current, record low-power dissipation under operation, continuous-wave up to at least 60 °C. A pronounced breakdown collector current limit high and/or emitter–collector voltage accompanied by quenching optical power interpreted as being related quantum band filling.
sci-hub.se 参考文章(11)
Mong-Kai Wu, Michael Liu, Rohan Bambery, Milton Feng, Nick Holonyak, Low Power Operation of a Vertical Cavity Transistor Laser via the Reduction of Collector Offset Voltage IEEE Photonics Technology Letters. ,vol. 26, pp. 1003- 1006 ,(2014) , 10.1109/LPT.2014.2312360
Y. Xiang, X. Yu, J. Berggren, T. Zabel, M. Hammar, M. N. Akram, Minority current distribution in InGaAs/GaAs transistor-vertical-cavity surface-emitting laser Applied Physics Letters. ,vol. 102, pp. 191101- ,(2013) , 10.1063/1.4803175
Larry A. Coldren, Diode Lasers and Photonic Integrated Circuits Optical Engineering. ,vol. 36, pp. 616- 617 ,(1997) , 10.1117/1.601191
X. Yu, Y. Xiang, J. Berggren, T. Zabel, M. Hammar, N. Akram, W. Shi, L. Chrostowski, Room-temperature operation of transistor vertical-cavity surface-emitting laser Electronics Letters. ,vol. 49, pp. 208- 210 ,(2013) , 10.1049/EL.2012.4243
A. James, G. Walter, M. Feng, N. Holonyak, Photon-assisted breakdown, negative resistance, and switching in a quantum-well transistor laser Applied Physics Letters. ,vol. 90, pp. 152109- ,(2007) , 10.1063/1.2721364
M. K. Wu, M. Feng, N. Holonyak, Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling Applied Physics Letters. ,vol. 101, pp. 081102- ,(2012) , 10.1063/1.4745791
M. Liu, M. K. Wu, M. Feng, N. Holonyak, Lateral feeding design and selective oxidation process in vertical cavity transistor laser Journal of Applied Physics. ,vol. 114, pp. 163104- ,(2013) , 10.1063/1.4827855
M Nadeem Akram, Yu Xiang, Xingang Yu, Thomas Zabel, Mattias Hammar, None, Influence of base-region thickness on the performance of Pnp transistor-VCSEL. Optics Express. ,vol. 22, pp. 27398- 27414 ,(2014) , 10.1364/OE.22.027398
Mong-Kai Wu, Milton Feng, Nick Holonyak, Surface Emission Vertical Cavity Transistor Laser IEEE Photonics Technology Letters. ,vol. 24, pp. 1346- 1348 ,(2012) , 10.1109/LPT.2012.2203356
Han Wui Then, Milton Feng, Nick Holonyak, The Transistor Laser: Theory and Experiment Proceedings of the IEEE. ,vol. 101, pp. 2271- 2298 ,(2013) , 10.1109/JPROC.2013.2274935