Comparative models for diffusion of implanted beryllium in gallium arsenide
作者： S Koumetz , J-C Pesant , C Dubois
DOI: 10.1088/0953-8984/18/22/L02
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摘要: The diffusion of implanted Be in GaAs at 100 keV for doses 1 × 1013 cm−2 and 1014 cm−2 has been investigated. observed secondary ion mass spectrometry profiles, obtained annealing temperatures 700–900 °C anneal times from 60 to 240 s, were simulated using different models the kick-out mechanism taking into account 'plus one' approach Ga self-interstitial generation after implantation as well local sink phenomenon. differential equations mobile species with initial boundary conditions solved numerically each model by explicit finite-difference method.
sci-hub.se 参考文章(20)
Jean-Pierre Nougier, Méthodes de calcul numérique Masson. ,(1987)
John Crank, The mathematics of diffusion ,(1956)
S. Yu, T. Y. Tan, U. Gösele, Diffusion mechanism of zinc and beryllium in gallium arsenide Journal of Applied Physics. ,vol. 69, pp. 3547- 3565 ,(1991) , 10.1063/1.348497
Ch. Ortiz, J.J. Grob, D. Mathiot, A. Claverie, Ch. Dubois, R. Jérisian, Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 147, pp. 122- 126 ,(1999) , 10.1016/S0168-583X(98)00575-8
S. Zhang, John Northrup, Chemical potential dependence of defect formation energies in GaAs : application to Ga self-diffusion Physical Review Letters. ,vol. 67, pp. 2339- 2342 ,(1991) , 10.1103/PHYSREVLETT.67.2339
H. Bracht, S. Brotzmann, Zinc diffusion in gallium arsenide and the properties of gallium interstitials Physical Review B. ,vol. 71, pp. 115216- ,(2005) , 10.1103/PHYSREVB.71.115216
R. Mosca, P. Bussei, S. Franchi, P. Frigeri, E. Gombia, A. Carnera, M. Peroni, Be diffusion in molecular beam epitaxy-grown GaAs structures Journal of Applied Physics. ,vol. 93, pp. 9709- 9716 ,(2003) , 10.1063/1.1572192
Robert W. Jansen, Dawit S. Wolde‐Kidane, Otto F. Sankey, Energetics and deep levels of interstitial defects in the compound semiconductors GaAs, AlAs, ZnSe, and ZnTe Journal of Applied Physics. ,vol. 64, pp. 2415- 2421 ,(1988) , 10.1063/1.341675
Michael D. Deal, Heyward G. Robinson, Modeling co-implanted silicon and beryllium in gallium arsenide Solid-State Electronics. ,vol. 33, pp. 665- 673 ,(1990) , 10.1016/0038-1101(90)90180-M
P. Enquist, G. W. Wicks, L. F. Eastman, C. Hitzman, Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 58, pp. 4130- 4134 ,(1985) , 10.1063/1.335543