Be diffusion in molecular beam epitaxy-grown GaAs structures

摘要: Beryllium diffusion is considered in heavily doped p-type GaAs structures grown by molecular beam epitaxy (MBE). Secondary ion mass spectrometry (SIMS) measurements performed on samples which underwent rapid thermal processing (RTP) experiments at 850 °C for 30 s show that (i) Be faster p/p+/p than p/p+ ones and (ii) an increase of the As4/Ga flux ratio during MBE growth affects only structures. These results are discussed modeling according to a substitutional–interstitial mechanism where transition from substitutional interstitial takes place kick-out process. The procedure, has been previously used simulate Zn other related compounds, modified order account lacking equilibrium initial concentration Ga interstitials. It shown when accounted beginning annealing experiment, a...