Interface properties of GaInP/Ge hetero-structure sub-cells of multi-junction solar cells
作者： A S Gudovskikh , K S Zelentsov , N A Kalyuzhnyy , V V Evstropov , V M Lantratov
DOI: 10.1088/0022-3727/45/49/495305
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摘要: The interface properties of the GaInP/Ge hetero-structure solar cells were studied. It was found that an undesirable potential barrier for majority carriers could occur at n-GaInP/n-Ge hetero-interface during growth multi-junction cells. leads to S-shape behaviour I?V curves low temperatures, which observed either single junctions or containing interface. values effective height and width as 0.12???0.05?eV 45?55?nm, respectively, estimated by admittance spectroscopy C?V profiling measurements.
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