Interfaces in III–V High Efficiency Solar Cells

摘要: The III–V multijunction solar cells consist of numerous layers with a transition between semiconductors different composition—hetero-interfaces, which can impair the quality and performance cells. properties hetero-interfaces their impact to GaInP/GaAs/Ge are explored in this chapter. It was demonstrated that among all interface-related factors (like recombination at interface states) undesired potential barriers isotype have most significant influence on cell high sun concentration. In particular, valence band offset III-arsenides (GaAs, AlGaAs) III-phosphides (GaInP, AlInP) leads for majority carriers p–p heterojunction interfaces results losses. A set experimental techniques successfully applied characterization. presence barrier its effective height mentioned above were experimentally determined. Another phenomenon III-V/IV is described example GaInP/Ge interface. An unexpected “parasitic” observed interface, related inter-diffusion process.