Influence of phosphine on Ge/Si(001) island growth by chemical vapor deposition

摘要: When Ge is deposited epitaxially on Si, the strain energy from lattice mismatch causes to form distinctive, three-dimensional islands. The shape of islands determined by energies surface facets, facet edges, and interfaces. phosphorus added during chemical vapor deposition Ge, change, modifying island shapes sizes. Three different are found for doped layers, as undoped layers; however, each type smaller than corresponding type. intermediate-size same family multifaceted “dome” structures, but considerably smaller; they also have a narrow size distribution. largest related defective “superdomes” islands, bounded number creating pyramidal-shaped structures with their edges aligned along 〈110〉 directions. distribution among types dep...