Mechanism for coarsening of P-mediated Ge quantum dots during in-situ annealing
作者： J. Qin , F.H. Li , Y.Q. Wu , H.B. Yang , Y.L. Fan
DOI: 10.1016/J.SUSC.2006.11.034
关键词: Molecular beam epitaxy 、 Atom 、 Silicon 、 Germanium 、 Isotropic etching 、 Annealing (metallurgy) 、 Chemical physics 、 Crystallography 、 Quantum dot 、 Materials science 、 Raman spectroscopy 、 Surfaces, Coatings and Films 、 Surfaces and Interfaces 、 Condensed matter physics 、 Materials Chemistry
摘要: … In this paper, the coarsening of phosphorus-mediated Ge QD during in-situ annealing is studied. We found that the rapid dot coarsening at the beginning of in-situ annealing is mainly …
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