Compact combiner consisting of semiconductor devices functioning in the hyperfrequency region

摘要: L'invention concerne un combineur compact de dispos i tifs semiconducteurs hyperfrequences, tels que les diodes a resistance negative (Gunn-Impat). The invention relates to combiner arranged tive microwave solid state such as (Gunn-impat). Le selon l'invention regroupe sur une embase (11): according the comprises on base -au centre au moins pastille semiconductrice (1) ou pluralite dispositifs integres dans seule (9), -at center at least one semiconductor wafer or plurality of devices integrated in single chip -une premiere couronne capacites (5), en elements localises, -a first ring capacity localized elements, - seconde (7) materiau dielectrique metallise deux faces planes opposees (14,15), formant la fois capacite et partie du boitier d'encap- sulation combineur, second metallized dielectric material two opposite plane forming both capacitor and portion encapsu- housing combiner, des rubans metalliques (4, 6) assurant liaisons entre composants actifs (1 9) (5, 7) simultanement selfs non localises. metal strips ensuring connections between active components capacitors simultaneously chokes elements. Un couvercle metallique (16) soude exterieure assure l'etancheite bottier amene tension polarisation. A cover welded outer sealing stacked causes bias voltage. Application aux oscillateurs amplificateurs hyperfrequences. oscillators amplifiers.