Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors
作者： X. G. Peralta , S. J. Allen , M. C. Wanke , N. E. Harff , J. A. Simmons
DOI: 10.1063/1.1497433
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摘要: Double-quantum-well field-effect transistors with a grating gate exhibit sharply resonant, voltage tuned terahertz photoconductivity. The resonance is determined by the plasma oscillations of composite structure. resonant photoconductivity requires double-quantum well but mechanism whereby produce changes in device conductance not understood. phenomenon potentially important for fast, tunable detectors.
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