Hydrogen silsesquioxane bilayer resists—Combining high resolution electron beam lithography and gentle resist removal

摘要: Hydrogen silsesquioxane (HSQ) is one of the leading resists for high resolution electron beam lithography. For example, lines and spaces with 12 nm pitch are reported in ultrathin HSQ. However, to take advantage this HSQ capability functional devices, pattern defined resist has be transferred underlaying substrate—either by etching or material deposition. The common remover hydrofluoric acid (HF), which not suitable all substrates. To avoid HF as remover, bilayer systems were developed different groups combining capabilities possibility remove an organic solvent. In paper, three types sacrificial layers including chrome, Novolak resin, poly methyl methacrylate reviewed compared.