Impact of Nucleation Density on Thermal Resistance near Diamond-Substrate Boundaries

摘要: Existing theory cannot account for the experimentally-observed thermal boundary resistance between deposited layers and substrates at room temperature. This is due to microstructural disorder in film within tens of nanometers interface. work develops a model resulting near diamond-substrate interfaces, where best deposition processes continue yield high concentrations amorphous inclusions nanocrystalline material. The relies on phonon transport novel subdivision near-interfacial region, which shows that governed by number diamond nucleation sites per unit substrate area, i.e. density. predictions are consistent with experimental data diamond-silicon interfaces indicate reaches minimum density 10{sup 10} cm{sup {minus}2}. facilitates development microstructures benefit more strongly from excellent thermal-conduction properties diamond.