Optimal AlGaN/GaN HEMT Buffer Layer Thickness in the Presence of an Embedded Thermal Boundary
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摘要: Thermal-boundary resistance (TBR) is present at the interfaces between different materials due to mismatch in phonon density of states. When GaN grown on silicon or carbide, when chemical-vapor deposited diamond GaN, TBR interface epilayers and substrate can contribute significantly overall thermal electronic devices. However, buffer layer an AlGaN/GaN high-electron mobility transistor (HEMT) offers a certain degree heat spreading placed above boundary potentially offering reduction if its thickness were optimized. We analyze flow typical HEMT substrates show that optimizing leads lower device.
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