Some Reliability Aspects of IGBT Modules for High-Power Applications

摘要: The assurance that a technical system will perform its intended function for the required duration and within given environment requires variety of engineering activities to be pcrformed, which start from project definition continue during whole life cycle. In case non-repairable systems this task is accomplished essentially by concurrent interdisciplinary efforts with scope contribute architecture design, selectmaterials, processes, components, as well validate selections made means tests, modeling, analysis. Present work deals some aspects related reliability physics Insulated Gate Bipolar Transistors (IGB7) high power applications it organized in three main thematic seetions. first section (Chapter 2) compendium 01' failure mechanisms presented, we observed arise either accelerated field applications. list mainly includes thermomechanical mechanisms, but also refers result into burnout events. For every mechanism, provided modes, physical or chemical process leads failure, possible countermeasures, where applied quantitative prediction models. second seetion (Chapters .3 4) techniques are have been specially adapted analysis thermal characterization IGBT devices. Failure methods inc1ude both non-destructive (e.g. electrical characterization) destructive procedures selective deprocessing). All ilIustrated very detail they dernonstrated