作者: Haizhong Guo , Lifeng Liu , Huibin Lu , Shuo Ding , Zhenghao Chen
DOI: 10.1016/J.TSF.2005.10.076
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摘要: Heteroepitaxial BaNbxTi1-xO3 (x=0.05, 0.2) thin films prepared on (100) MgO substrates have been studied by Micro-Raman spectroscopy, X-ray diffraction and electrical measurements. It is found that the BaNb0.05Ti0.95O3 film at tetragonal phase while BaNb0.2Ti0.8O3 cubic phase. The measurement of temperature dependence resistivity shows a semiconductor from 570 to 170 K, but exhibits transitional conduction behavior between 78 K. Because two-dimensional compressive strain imposed substrate, transition characteristics for bulk BaTiO3 (i.e, orthorhombic rhombohedral) are absent in over range 550 (c) 2005 Elsevier B.V All rights reserved.