Electrical responses of artificial DNA nanostructures on solution-processed In-Ga-Zn-O thin-film transistors with multistacked active layers.
作者： Joohye Jung , Si Joon Kim , Doo Hyun Yoon , Byeonghoon Kim , Sung Ha Park
DOI: 10.1021/AM302210G
关键词:
摘要: We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use layers. Our IGZO TFT had a turn-on voltage (V(on)) -0.8 V subthreshold swing (SS) value 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the surface, after which an anomalous hump effect accompanying significant decrease in V(on) (-13.6 V) degradation SS (1.29 V/decade) observed. This behavior attributed middle interfaces negatively charged phosphate groups backbone, generated parasitic path device. These results compared favorably those reported conventional field-effect transistor-based sensors remarkable sensitivity stability.
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