Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors
作者： Xiaosong Du , Brendan T. Flynn , Joshua R. Motley , William F. Stickle , Hendrik Bluhm
DOI: 10.1149/2.010409JSS
关键词:
摘要: Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) fluorinated hexylphosphonic (FPA) SAMs adsorbed on IGZO back channel surfaces were shown significantly reduce bias stress turn-on voltage shifts compared with no SAMs. FPA was found a lower surface energy packing density than HPA, as well shifts. The improved TFTs can be primarily attributed reduction in molecular adsorption contaminants minimal trapping states present phosphonic binding surface.
arxiv.org
core.ac.uk
ecsdl.org参考文章(39)
Xingyi Deng, Albert Verdaguer, Tirma Herranz, Christoph Weis, Hendrik Bluhm, Miquel Salmeron, Surface chemistry of Cu in the presence of CO2 and H2O. Langmuir. ,vol. 24, pp. 9474- 9478 ,(2008) , 10.1021/LA8011052
Jaeseob Lee, Jin-Seong Park, Young Shin Pyo, Dong Bum Lee, Eun Hyun Kim, Denis Stryakhilev, Tae Woong Kim, Dong Un Jin, Yeon-Gon Mo, The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors Applied Physics Letters. ,vol. 95, pp. 123502- ,(2009) , 10.1063/1.3232179
D. Frank Ogletree, Hendrik Bluhm, Eleonore D. Hebenstreit, Miquel Salmeron, Photoelectron spectroscopy under ambient pressure and temperature conditions Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment. ,vol. 601, pp. 151- 160 ,(2009) , 10.1016/J.NIMA.2008.12.155
Yi Xie, Xiujian Zhao, Yunxia Chen, Qingnan Zhao, Qihua Yuan, Preparation and characterization of porous C-modified anatase titania films with visible light catalytic activity Journal of Solid State Chemistry. ,vol. 180, pp. 3576- 3582 ,(2007) , 10.1016/J.JSSC.2007.10.023
F. R. Libsch, J. Kanicki, Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors Applied Physics Letters. ,vol. 62, pp. 1286- 1288 ,(1993) , 10.1063/1.108709
Yu-Chih Huang, Po-Yu Yang, Hau-Yuan Huang, Shui-Jinn Wang, Huang-Chung Cheng, Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors. Journal of Nanoscience and Nanotechnology. ,vol. 12, pp. 5625- 5630 ,(2012) , 10.1166/JNN.2012.6307
Peng Xiao, Linfeng Lan, Ting Dong, Zhenguo Lin, Wen Shi, Rihui Yao, Xuhui Zhu, Junbiao Peng, InGaZnO thin-film transistors with back channel modification by organic self-assembled monolayers Applied Physics Letters. ,vol. 104, pp. 051607- ,(2014) , 10.1063/1.4864313
Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, Hideo Hosono, Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy Journal of Applied Physics. ,vol. 109, pp. 073726- ,(2011) , 10.1063/1.3560769
Peter J. Hotchkiss, Michał Malicki, Anthony J. Giordano, Neal R. Armstrong, Seth R. Marder, Characterization of phosphonic acid binding to zinc oxide Journal of Materials Chemistry. ,vol. 21, pp. 3107- 3112 ,(2011) , 10.1039/C0JM02829K
Jin-Seong Park, Jae Kyeong Jeong, Hyun-Joong Chung, Yeon-Gon Mo, Hye Dong Kim, Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water Applied Physics Letters. ,vol. 92, pp. 072104- ,(2008) , 10.1063/1.2838380