Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors
作者： Narendra Kumar , Jitendra Kumar , Siddhartha Panda
DOI: 10.1063/1.4922440
关键词:
摘要: The use of a-IGZO instead the conventional high-k dielectrics as a pH sensitive layer could lead to simplification fabrication steps field effect based devices. In this work, sensitivities films directly deposited over SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing was found affect sensitivity devices and device with film annealed at 400 oC in N2 ambience showed better sensitivity, which reduced further increase annealing temperature 500 oC. increased gas attributed enhanced lattice oxygen ions (based on XPS data) improved C-V characteristics, while decrease an defects well induced traps IGZO/SiO2 interface stretched accumulation peak inversion region curves. This study help develop sensor where material (a-IGZO here) used active thin transistors (TFTs) possibly also be without affecting TFT thus obviating need high-K for enhancement.
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