Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces
作者： Igor Krylov , Lior Kornblum , Arkady Gavrilov , Dan Ritter , Moshe Eizenberg
DOI: 10.1063/1.4704925
关键词: Gate stack 、 Dielectric 、 Inversion (meteorology) 、 Materials science 、 Gallium arsenide 、 Conductance 、 Condensed matter physics 、 Band gap
摘要: Temperature dependent capacitance–voltage (CV) and conductance-voltage (GV) measurements were performed to obtain activation energies (E A ) for weak inversion CV humps and …
scitation.org
harvard.edu
aip.org
sci-hub.se 
yale.edu 参考文章(13)
Fundamentals of III-V Semiconductor MOSFETs Springer Publishing Company, Incorporated. ,(2010) , 10.1007/978-1-4419-1547-4
Yoontae Hwang, Roman Engel-Herbert, Nicholas G. Rudawski, Susanne Stemmer, Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks Journal of Applied Physics. ,vol. 108, pp. 034111- ,(2010) , 10.1063/1.3465524
É. O’Connor, B. Brennan, V. Djara, K. Cherkaoui, S. Monaghan, S. B. Newcomb, R. Contreras, M. Milojevic, G. Hughes, M. E. Pemble, R. M. Wallace, P. K. Hurley, A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers Journal of Applied Physics. ,vol. 109, pp. 024101- ,(2011) , 10.1063/1.3533959
Eun Ji Kim, Lingquan Wang, Peter M. Asbeck, Krishna C. Saraswat, Paul C. McIntyre, Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals Applied Physics Letters. ,vol. 96, pp. 012906- ,(2010) , 10.1063/1.3281027
Roman Engel-Herbert, Yoontae Hwang, Joël Cagnon, Susanne Stemmer, Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition Applied Physics Letters. ,vol. 95, pp. 062908- ,(2009) , 10.1063/1.3204465
ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, M Hong, None, Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3 Applied Physics Letters. ,vol. 87, pp. 252104- ,(2005) , 10.1063/1.2146060
Yoontae Hwang, Roman Engel-Herbert, Susanne Stemmer, None, Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces Applied Physics Letters. ,vol. 98, pp. 052911- ,(2011) , 10.1063/1.3553275
Igor Krylov, Arkady Gavrilov, Dan Ritter, Moshe Eizenberg, Elimination of the weak inversion hump in Si3N4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment Applied Physics Letters. ,vol. 99, pp. 203504- ,(2011) , 10.1063/1.3662035
Greg J Burek, Yoontae Hwang, Andrew D Carter, Varistha Chobpattana, Jeremy JM Law, William J Mitchell, Brian Thibeault, Susanne Stemmer, Mark JW Rodwell, None, Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces Journal of Vacuum Science & Technology B. ,vol. 29, pp. 040603- ,(2011) , 10.1116/1.3610989
C. L. Hinkle, M. Milojevic, B. Brennan, A. M. Sonnet, F. S. Aguirre-Tostado, G. J. Hughes, E. M. Vogel, R. M. Wallace, Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning Applied Physics Letters. ,vol. 94, pp. 162101- ,(2009) , 10.1063/1.3120546