Modification of metal oxide semiconductor gas sensor by electrophoretic deposition

摘要: Abstract The electrophoretic phenomenon is applied in the fields of bioscience and functional ceramics. deposition method has several kinds advantages to make a coating layer on complicated shape gas sensor with multilayer structures. We succeeded forming an Al2O3 Pd-doped SnO2-based bead type sensors by deposition. And we also dealt 200 same run, indicating that this was excellent mass production. In addition, formed various uniform layers Al2O3, TiO2, ZnO, In2O3, SnO2 CeO2 even miniaturized 150 μm diameter conventional substrate sensor. Therefore, would be effective any size semiconductor