Principles for controlling the optical and electrical properties of hydrogenated amorphous silicon deposited from a silane plasma

摘要: The optical, electrical, and structural properties of hydrogenated amorphous silicon (a‐Si:H) films are systematically investigated as functions the substrate temperature (Ts) plasma parameters, such rf power, gas pressure, electrode dimensions. deposited by chemical vapor deposition method. a‐Si:H can be controlled over a wide range varying parameters at fixed Ts. Reducing film rate raising Ts have same effect on a‐Si:H. A unified relationship is found to exist among those in conditions this study, which includes ‘‘device‐quality’’ conditions. No apparent effects gas‐phase polymerization or ion bombardment observed. experimental results suggest that during device‐quality under conventional conditions, governed competition between growth thermally activated surface reactions near film‐growing surface. limitations controllability plasma‐deposited a‐Si:H, especially low Ts, surmounted adding hydrogen helium plasma, treating with plasma.