Atmospheric pressure plasma chemical vapor deposition system for high-rate deposition of functional materials
作者： Y. Mori , K. Yoshii , H. Kakiuchi , K. Yasutake
DOI: 10.1063/1.1305510
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摘要: The atmospheric pressure plasma chemical vapor deposition (CVD) system has been developed to fabricate functional thin films at very high rate. plasma, in which high-density radicals are created, effectively used deposit films. Combination of the newly designed rotary electrode and 150 MHz frequency power supply makes it possible not only generate but also avoid ion bombardment against film. By virtue these noble characteristics system, quality can be fabricated an unprecedented In order demonstrate effectiveness CVD hydrogenated amorphous silicon (a-Si:H) were prepared gas mixtures containing He, H2, SiH4. results showed that homogeneous a-Si:H grew when substrates heated 200 °C. Extremely rate, was more than 100 times faster of...
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