作者: G. Anoop , Juhee Seo , Chang Jo Han , Hyeon Jun Lee , Gil Woong Kim
DOI: 10.1016/J.SOLENER.2014.10.037
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摘要: Abstract For transparent solar cells, Sn:In 2 O 3 /Pb(Zr, Ti)TiO /Pt(⩽5 nm)/Sn:In capacitor structures were fabricated using a cost-effective solution process. The insertion of ultra-thin Pt layer between the bottom electrode and Pb(Zr, plays critical role in photovoltaic characteristics capacitors. Pb(Zr,Ti)O capacitors with 5 nm thick showed excellent polarization–voltage curves reduced leakage current due to both partial (1 1 1) orientation alloy formation electrode, as confirmed X-ray photoelectron spectra analysis. exhibit transmittance 45–50% visible light region. density–voltage under illumination (AM1.5G) an open circuit voltage value −0.62 V short density 0.6 μA/cm after negative poling, maximum power conversion efficiency 1.7 × 10 −4 %. is larger poling higher net internal bias arising from Schottky barrier.