Method for treating surface of aluminum material and plasma treating apparatus

摘要: An alumite coating film is formed on a surface of an aluminum electrode by anodic oxidation. Pores the are sealed. Thereafter, silicon nitride plasma CVD. In etching apparatus using which and sequentially layered, HBr/HCl gas used as process to perform wafer. active radical generated from etches wafer attacks electrode. Since protected with film, substrate prevented being etched. Therefore, impurity materials not dispersed into chamber apparatus. As result, can be contaminated materials.