Uniform and High-Power Characteristics of AlGaInP-Based Laser Diodes With 4-Inch-Wafer Process Technology
作者： Hiroyuki Sumitomo , Satoshi Kajiyama , Hiroyuki Oguri , Takeshi Sakashita , Toru Yamamoto
DOI: 10.1109/JSTQE.2007.903488
关键词:
摘要: Large-scale fabrication processes of high-power single-lateral-mode laser diodes (LDs) have been successfully demonstrated for the first time using 4-inch-wafer process technology. An excellent uniformity LD characteristics is obtained over an 88-mm-diameter area 4-inch wafer with small deviation, e.g., sigma/ave. = 3.5% (ave. plusmn sigma 73.5 2.6 mA) threshold current, and 0.12% (658.00 0.79 nm) peak wavelength. The LDs show stable kink-free operation 400 mW even at a high temperature 75degC current 600 mA.
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sci-hub.se 参考文章(10)
Y. Yoshida, M. Sasaki, K. Shibata, Z. Kawazu, K.-I. Ono, H. Nishiguchi, T. Yagi, T. Nishimura, Kink and power saturation of 660-nm AlGaInP laser diodes IEEE Journal of Quantum Electronics. ,vol. 41, pp. 828- 832 ,(2005) , 10.1109/JQE.2005.846697
T. Onishi, K. Inoue, K. Onozawa, T. Takayama, M. Yuri, High-power and high-temperature operation of Mg-doped AlGaInP-based red laser diodes IEEE Journal of Quantum Electronics. ,vol. 40, pp. 1634- 1638 ,(2004) , 10.1109/JQE.2004.837323
Ryoji Hiroyama, Daijiro Inoue, Shingo Kameyama, Atsushi Tajiri, Masayuki Shono, Minoru Sawada, Akira Ibaraki, High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current Japanese Journal of Applied Physics. ,vol. 43, pp. 1951- 1955 ,(2004) , 10.1143/JJAP.43.1951
K. Shibata, Y. Yoshida, M. Sasaki, K. Ono, J.-I. Horie, T. Yagi, T. Nishimura, High-power 660-nm laser diodes for recordable dual layer DVDs international semiconductor laser conference. ,vol. 11, pp. 1193- 1196 ,(2004) , 10.1109/JSTQE.2005.853779
T.F. Kuech, P.-J. Wang, M.A. Tischler, R. Potemski, G.J. Scilla, F. Cardone, The control and modeling of doping profiles and transients in MOVPE growth Journal of Crystal Growth. ,vol. 93, pp. 624- 630 ,(1988) , 10.1016/0022-0248(88)90594-5
Yukie Nishikawa, Hideto Sugawara, Yoshihiro Kokubun, Anomalous Mg incorporation behavior in InGaAlP grown by metalorganic chemical vapor deposition Journal of Crystal Growth. ,vol. 119, pp. 292- 296 ,(1992) , 10.1016/0022-0248(92)90681-8
Y. Nagai, T. Shiba, Y. Kunitsugu, M. Miyashita, S. Karakida, H. Watanabe, A. Shima, K. Nagahama, M. Otsubo, K. Ikeda, W. Susaki, Large-area wafer processing for 0.78-/spl mu/m AlGaAs laser diodes IEEE Photonics Technology Letters. ,vol. 7, pp. 1101- 1103 ,(1995) , 10.1109/68.466556
Byungjin Ma, Soohaeng Cho, Changyoun Lee, Youngmin Kim, Yongjo Park, High-power 660-nm GaInP-AlGaInP laser diodes with low vertical beam divergence angles IEEE Photonics Technology Letters. ,vol. 17, pp. 1375- 1377 ,(2005) , 10.1109/LPT.2005.849977
A. Shima, M. Kato, Y. Nagai, T. Motoda, T. Nishimura, E. Omura, M. Otsubo, Uniform and high-power characteristics of AlGaInP visible laser diodes and their four-element arrays fabricated on a three-inch /spl phi/ wafer IEEE Journal of Selected Topics in Quantum Electronics. ,vol. 1, pp. 734- 740 ,(1995) , 10.1109/2944.401265
Hitoshi Haematsu, Shigeru Yokogawa, Yasunori Tateno, Junichiro Nikaido, Eizo Mitani, Mass-Production of High-Voltage GaAs and GaN Devices ,(2006)