Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes

摘要: Abstract GaAs-based laser diodes emitting in the red spectral region have challenging material and thermal properties when reducing emission wavelength towards physical limit around 630 nm. To improve of such diodes, we optimized growth parameters GaInP quantum wells (QW) embedded AlGaInP. The temperature V/III ratio during QW was varied. By from 770 to 700 °C, an improvement performance achieved at 635 643 nm wavelength. increasing ratio, a higher photoluminescence intensity could be test samples. Combining both approaches important like threshold current density, differential efficiency internal absorption were improved substantially.