Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
作者： Simon Ploch , Tim Wernicke , Johannes Thalmair , Matthias Lohr , Markus Pristovsek
DOI: 10.1016/J.JCRYSGRO.2012.07.016
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摘要: Abstract The growth of AlGaN, GaN and InGaN layers on ( 20 2 ¯ 1 ) substrates was investigated by metal-organic vapor phase epitaxy. All exhibit undulations along [ 10 4 ] with a period length between 20 nm 45 nm. Under certain conditions, exhibits bunching the leading to an increase undulation amplitude. This is also observed in ternary alloys AlGaN. Strong impact temperature reactor pressure surface roughness photoluminescence properties found for layers, smoothest obtained at low temperatures pressures. Atomic scale interpretation suggests that originate from 0 microfacets.
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