AES study of the interaction of Ni and Al overlayers with WTi and WRe diffusion barriers
作者： H. Lange , H. Reis , F. Fenske
关键词:
摘要: WTi layers are conventionally used as diffusion barriers in microelectronics. The preparation of sputter targets presents, however, technological problems due to the different physical properties both metals. An alternative is system WRe which exhibits far better processing behaviour. Results Auger studies on barrier systems reported. behaviour investigated between PtSi and Al or Ni overlayers at temperatures. It shown that presents a reasonable least up 500 °C annealing temperature. WTi-Diffusionsbarrieren werden ublicherweise der Mikroelektronik eingesetzt. Die Herstellung von Sputtertargets bereitet jedoch wegen unterschiedlichen physikalischen Eigenschaften beider Metalle technologische Probleme. Eine Alternative stellt das System dar, gunstigere Verarbeitungseigenschaften besitzt. Es Ergebnisse Auger-Untersuchungen zum Diffusionsbarrierenverhalten Systeme berichtet. Diffusionsbarrieren zwischen und Al- oder Ni-Deckschichten untersucht. Dabei wird gezeigt, WRe-Diffusionsbarrieren eine akzeptable mindestens bis zu Temperungstemperaturen darstellen.
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