Effect of heat sink on electromigration lifetime of Ni thin film
作者： Lin Huang , Shijie Chen , Fengshun Wu , Weisheng Xia , Hui Liu
DOI: 10.1109/ICEPT.2014.6922829
关键词:
摘要: Thermal design and thermal management are the key issues for electronic products during trend of miniaturization. Heat sink is one promising popular choices to relieve problem. In this paper, effect heat on electromigration (EM) lifetime Ni thin films investigated. It proved that had no influence temperature coefficient resistance (TCR), but could reduce rise (TR) raise breakdown voltage efficiently. The failure data with time obtained by accelerated test were analyzed ALTA software based Temperature-Non (T-NT) lognormal model. maximum allowable under service condition be 5 years 100% duty cycle 0.05% cumulative distribution function (CDF). summary, obviously improve EM film due its excellent dissipation ability.
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