PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION
作者： Guanghui Xu , Xiangyang Jing , Yin Zhang , Baibiao Huang , None
DOI: 10.1142/S0218625X09013414
关键词:
摘要: (Bi0.92Ce0.08)2Ti2O7 thin films have been successfully prepared on P-type Si(100) substrates by a chemical solution decomposition method. The structural properties of the were studied X-ray diffraction. phase stability Bi2Ti2O7 was improved after Ce ions doped. dielectric constants annealed at 650° and 700°C higher than that without modification. 650°C showed highest permittivity. memory windows in C–V loops studied, indicating not ferroelectric films. All these results Ce-doped had potential for DRAM MOS applications.
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