Effect of La doping on structural and electrical properties of Bi2Ti2O7thin films
作者： X.N. Yang , B.B. Huang , H.B. Wang , S.X. Shang , W.F. Yao
DOI: 10.1016/J.JCRYSGRO.2004.05.103
关键词: Doping 、 High-κ dielectric 、 Pyrochlore 、 Crystallization 、 Annealing (metallurgy) 、 Composite material 、 Materials science 、 Dielectric 、 Mineralogy 、 Crystallinity 、 Thin film
摘要: Abstract La-doped Bi 2 Ti O 7 thin films have been grown on P-type Si〈1 0 0〉 substrates by a chemical solution decomposition method. X-ray diffraction analysis confirmed that the crystallinity of increases with increasing annealing temperature. The effects various temperatures upon structure crystallization were investigated. insulation characteristic and dielectric properties also studied. film annealed at 700°C consists pyrochlore phase perovskite phase, which has relatively low leakage current high constant. results revealed good insulating can be considered to used in advanced MOS transistors.
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