Electrochemical phenomena in thin films of silicon dioxide on silicon

摘要: A study has been made of the effect chemical additives and annealing electrical biasing procedures upon state charge silica films grown on silicon. model, proposed to account for observations, is based assumption that phosphorus, aluminum, boron, when present, substitute Si in SiO2. The resulting species may be represented as PO2+, PO2-, AIO2-, or BO2-. mobile carrier under conditions investigated here assumed an oxide-ion vacancy. Under certain electrolysis accompanied by deviations from Faraday's laws changes net oxide; other only distribution oxide changed. experiments leading development which were done with metal-oxide-silicon structures, have supplemented field transistors. Field transistors n-p-n type operate enhancement mode.