作者: Markus Biebl , Emmerich Bertagnolli
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摘要: In a method for manufacturing tunnel-effect sensors, tip (2) composed of the silicon substrate (1) is produced on with electrically conductively doped regions (4) by oxidation using nitride mask surface. Using planarized oxide layer (5) in step, beam (3) polysilicon that anchored applied, example, over as cooperating electrodes utilization tunnel effect and doped. Subsequently, removed.