Properties of polysilicon films annealed by a rapid thermal annealing process
作者： Lj. Ristic , M.L. Kniffin , R. Gutteridge , H.G. Hughes
DOI: 10.1016/0040-6090(92)90556-Q
关键词: Composite material 、 Cantilever 、 Doping 、 Scientific method 、 Stress (mechanics) 、 Conductivity 、 Materials science 、 Rapid thermal annealing
摘要: This paper describes the electrical and mechanical properties of polysilicon films annealed by a rapid thermal annealing (RTA) process. The results show that doped RTA process have conductivity below 100 ω sq−1. is sufficient for application integrated micromechanical structures. Also, stress non-uniformity, as well average in RTA, acceptable manufacturing flat cantilever beams. 2 μm compressive typically less than 200 MPa.
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