Dielectric Modulated Schottky Barrier TFET for the Application as Label-Free Biosensor
作者： N. K. Hema Latha , Sumit Kale
DOI: 10.1007/S12633-019-00363-7
关键词:
摘要: This paper reported a dielectric modulated (DM) Schottky Barrier (SB) TFET (DM SB TFET) as label free biosensor applications. In proposed device, we have created nanogap cavity within the gate near source end for sensing biomolecules. Therefore, modulation of width at occurs due to presence biomolecules in form different material used fill cavity. Hence, current flow from drain is highly sensitive change properties materials. Here, investigated performance device terms its capability by variation constant and, charge density. Also, observed length thickness and bias. Results show high sensitivity drive Simulations been performed two dimensional SILVACO ATLAS simulator.
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