Flash memory having memory section and peripheral circuit section
作者： Kikuko Sugimae , Riichiro Shirota , Atsuhiro Sato , Masayuki Ichige , Hiroaki Hazama
DOI:
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摘要: A semiconductor memory device includes a substrate, an element isolation region formed in the substrate and including thick isolating insulation film, for region, first gate electrode provided on self-alignment with second film interposed therebetween, resistance being of same conductive film.
lens.org 参考文章(11)
Hiroshi Nakamura, Current generating circuit ,(1999)
Kikuko Sugimae, Masayuki Ichige, Yuji Takeuchi, Riichiro Shirota, Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same ,(2001)
Jonathan Maimon, Leonard R. Rockett, Charles N. Alcorn, Nadim Haddad, Scott Doyle, Method for fabricating resistors within semiconductor integrated circuit devices ,(2000)
Dong-soo Jang, Ki-ho Kwon, Non-volatile memory devices including capping layer contact holes ,(1997)
Yelehanka Ramachandramurthy Pradeep, Jie Yu, Vijay Kumar Chhagan, Mei Sheng Zhou, Self-aligned floating gate for memory application using shallow trench isolation ,(1999)
Sumio Tanaka, Shigeru Atsumi, Nobuaki Ohtsuka, Shinji Saito, High-speed write type nonvolatile semiconductor memory ,(1987)
Jung-Dal Choi, Method for manufacturing nonvolatile memory device ,(1999)
Kikuko Sugimae, Masayuki Ichige, Yuji Takeuchi, Riichiro Shirota, Atsuhiro Sato, Capacitor element with an opening portion formed in a peripheral circuit ,(2001)
Makoto Ooi, Kojiro Yuzuriha, Shinichi Kobayashi, Semiconductor device having a structure for detecting a boosted potential ,(1998)
誠一 有留, Wakako Moriyama, Seiichi Aritome, 和裕 清水, Hirohisa Iizuka, 理一郎 白田, Riichiro Shirata, 博顕 間, 和歌子 森山, Kazuhiro Shimizu, Hiroaki Hazama, 晃 合田, 裕久 飯塚, Akira Aida, Nonvolatile semiconductor memory device and manufacture thereof ,(1999)