Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same

作者: Kikuko Sugimae , Masayuki Ichige , Yuji Takeuchi , Riichiro Shirota

DOI:

关键词:

摘要: An element isolating region for separating an of a semiconductor layer is formed in peripheral circuit section memory device, and first conductive with the insulating film interposed therebetween. A second on to extend into region. surface that which positioned within exposed, third Further, contact electrically connected exposed layer.

参考文章(13)
Kikuko Sugimae, Riichiro Shirota, Atsuhiro Sato, Masayuki Ichige, Hiroaki Hazama, Flash memory having memory section and peripheral circuit section ,(2001)
Louis Lu-Chen Hsu, Joseph Francis Shepard, Carol Galli, Joyce Elizabeth Acocella, Seiki Ogura, Nivo Rovedo, Packing density for flash memories ,(1996)
Hideyuki Matsuoka, Toshiaki Yamanaka, Shinichiro Kimura, Semiconductor memory device and a method for fabricating the same ,(1997)
Kikuko Sugimae, Masayuki Ichige, Yuji Takeuchi, Riichiro Shirota, Atsuhiro Sato, Capacitor element with an opening portion formed in a peripheral circuit ,(2001)
誠一 有留, Wakako Moriyama, Seiichi Aritome, 和裕 清水, Hirohisa Iizuka, 理一郎 白田, Riichiro Shirata, 博顕 間, 和歌子 森山, Kazuhiro Shimizu, Hiroaki Hazama, 晃 合田, 裕久 飯塚, Akira Aida, Nonvolatile semiconductor memory device and manufacture thereof ,(1999)