Fabrication by tri-level electron beam lithography of X-ray masks with 50nm linewidth, and replication by X-ray nanolithography
作者： Erik H. Anderson , D.P. Kern , Henry I. Smith
DOI: 10.1016/0167-9317(87)90085-2
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摘要: Abstract A process has been developed to produce x-ray nanolithography masks containing fine linewidth patterns generated by scanning-electron-beam lithography. This technology allows researchers combine the high resolution, arbitrary-pattern-generation capability of electron-beam lithography with parallel replication, contrast, and large process-latitude nanolithography. tri-level structure was used which consisted PMMA as electron-sensitive material, titanium middle, masking layer, polymide buffer layer on top a gold plating base. After exposure development, pattern is transfered Ti CCl 2 F RIE, then polyimide mold produced O RIE. Gold electroplated into this form absorber. X-ray 100nm-period gratings electronic device ≈ 100nm linewidths were fabricated replicated.
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