A statistical analysis of ultraviolet, x-ray, and charged-particle lithographies

摘要: We analyze photo, x‐ray, e‐beam, and ion‐beam lithographies from a statistical point of view in order to relate linewidth control the contrast provided by exposure technique, resist contrast, sensitivity. Assuming 20% at minimum 0.5  μm, we compare UV x‐ray find that former is practical only with very high resists (δN/N<0.16). derive simple expression for number photons or charged particles required per pixel, pixel‐transfer rates various lithographies. beyond photolithography, synchrotron pulsed‐plasma sources offer highest appear most attractive submicron lithography.