Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects

摘要: The different relaxation processes that connect the four energy levels in phosphorus doped silicon have been investigated experimentally. time ${T}_{s}$ ($\ensuremath{\Delta}{m}_{s}=\ifmmode\pm\else\textpm\fi{}1$, $\ensuremath{\Delta}{m}_{I}=0$) was found to be independent of concentration below \ensuremath{\sim}${10}^{16}$ P/${\mathrm{cm}}^{3}$. Its value at 3200 oersteds and 1.25\ifmmode^\circ\else\textdegree\fi{}K \ensuremath{\sim}3\ifmmode\times\else\texttimes\fi{}${10}^{+3}$ seconds varied as $\frac{1}{T}$ for $1.3\ifmmode^\circ\else\textdegree\fi{}\mathrm{K}lTl2\ifmmode^\circ\else\textdegree\fi{}\mathrm{K}$ $\frac{1}{{T}^{7}}$ $2.5\ifmmode^\circ\else\textdegree\fi{}\mathrm{K}lTl4.2\ifmmode^\circ\else\textdegree\fi{}\mathrm{K}$. magnetic field dependence region suggests a direct phonon process. In between 3000 8000 oersteds. Above ${10}^{16}$ P/${\mathrm{cm}}^{3}$ rapidly with donor concentration, dropping ${10}^{\ensuremath{-}4}$ 3\ifmmode\times\else\texttimes\fi{}${10}^{17}$ this dependent but depended on number acceptors present. None mechanisms can present accounted by theories Pines, Bardeen, Slichter, Abrahams. ${T}_{x}$ $\ensuremath{\Delta}{m}_{I}=\ensuremath{\mp}1$) \ensuremath{\sim}30 hours \ensuremath{\sim}5 fair agreement theory PBS. ${T}_{N}$ ($\ensuremath{\Delta}{m}_{I}=\ifmmode\pm\else\textpm\fi{}1$, $\ensuremath{\Delta}{m}_{s}=0$) exceeded 10 hours.The effect light monochromator $0.5 \mathrm{ev}lh\ensuremath{\nu}l2 \mathrm{ev}$. carriers introduced obtained from Hall coefficient. sample 7\ifmmode\times\else\texttimes\fi{}${10}^{15}$ P/${\mathrm{cm}}^{3}$, reduced 25 2\ifmmode\times\else\texttimes\fi{}${10}^{6}$ electrons/${\mathrm{cm}}^{3}$. Under same conditions spin-spin ${T}_{\mathrm{ss}}$ 1 second. bottleneck ${T}_{s}$-spin exchange mechanism suggested PBS is spin-lattice free carriers. This absent double spin Anderson responsible observed process.A resonant interaction electron bound an iron impurity when which two resonance lines overlap traversed. application "mixing" nuclear polarization scheme discussed. A complete mixing also 40 oersteds.A diffusion process capable transmitting excitation parts line arsenic silicon. proceeds discrete steps frequencies determined Larmor ${\mathrm{Si}}^{29}$ nuclei situated various lattice sites relative atom.