Application of Plasma Charging Probe to Production HDP CVD Tool

作者: G.A. Roche , J.P. McVittie

DOI: 10.1109/PPID.1996.715205

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摘要: … The continued decrease in gate oxide thickness for MOS devices requires a corresponding … 2500 W microwave power, and one point each at 0 and 2450 W RF power. For this reason, …

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