Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers
作者： Shawming Ma
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摘要: An apparatus, system and method for the real-time monitoring of plasma charging during processing are provided which overcome deficiencies in currently available systems methods. According to one embodiment, apparatus utilizes a detection wafer that comprises an Al pad located on placed contact with plasma. The potential difference generated between substrate as result is voltage V c . transmitted through electrical contacts modified biased lift pin assembly supporting wafer, itself, at locations remote from Electrical thus established by positive physical pins registered external chamber connected remotely For example, methodology present invention therefore improves prior art devices eliminating bonded connections wires traditionally environment require passage wall connect measuring equipment.
lens.org 参考文章(13)
Gerard Ennis, Vacuum plasma processor and method of operating same ,(2001)
Chung Chan, System for the plasma treatment of large area substrates ,(1997)
Shigemi Murakawa, James P. McVittie, Direct Measurement of Surface Charging during Plasma Etching Japanese Journal of Applied Physics. ,vol. 33, pp. 4446- 4449 ,(1994) , 10.1143/JJAP.33.4446
Shawming Ma, James P. McVittie, PLASMA INDUCED WAFER CHARGING SENSOR Journal of The Chinese Institute of Engineers. ,vol. 21, pp. 11- 19 ,(1998) , 10.1080/02533839.1998.9670366
G.A. Roche, J.P. McVittie, Application of Plasma Charging Probe to Production HDP CVD Tool international symposium on plasma process induced damage. pp. 71- 74 ,(1996) , 10.1109/PPID.1996.715205
Shawming Ma, J.P. McVittie, K.C. Saraswat, Prediction of plasma charging induced gate oxide damage by plasma charging probe IEEE Electron Device Letters. ,vol. 18, pp. 468- 470 ,(1997) , 10.1109/55.624913
Shawming Ma, J.P. Mcvittie, Prediction of Plasma Charging Induced Gate Oxide Tunneling Current and Antenna Dependence by Plasma Charging Probe international symposium on plasma process induced damage. pp. 20- 23 ,(1996) , 10.1109/PPID.1996.715194
Steven Franchuk, Ken E. Tokunaga, Carlos Manzanilla, Rajinder Dhindsa, Wafer electrical discharge control by wafer lifter system ,(1997)
Dragan Podlesnik, Xue-Yu Qian, Yan Ye, Peter Loewenhardt, Yoshi Tanase, Valentin N. Todorov, Arthur H. Sato, Shaoher X. Pan, Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same ,(1996)
Svetlana B. Radovanov, Edward Macintosh, Philip Corey, Gary Ayers, Monitor system and method for semiconductor processes ,(2001)