Single-particle states in spherical Si/SiO2 quantum dots

摘要: We calculate the ground and excited electron hole levels in spherical Si quantum dots inside $\mathrm{Si}{\mathrm{O}}_{2}$ a multiband effective mass approximation. The Luttinger Hamiltonian is used for holes, strong anisotropy of conduction taken into account. As boundary conditions wave functions, we use continuity functions flux at boundaries dots.